FAILURE ANALYSIS LEVEL 1

CURVE TRACING FAILURE ANALYSIS

Curve tracing is a fundamental electrical characterization technique used in semiconductor failure analysis to evaluate the behavior of a device by plotting its current–voltage (I-V) characteristics. By applying controlled voltage or current stimuli to specific terminals and observing the response, engineers can determine whether the device is operating within its expected parameters or exhibiting abnormal behavior indicative of a defect.

Key applications in failure analysis include:

• Pin-to-Pin Electrical Evaluation: Measuring leakage, shorts, or opens between device pins to quickly identify electrical anomalies.
• Junction Integrity: Verifying diode characteristics such as forward voltage drop, reverse leakage current, and breakdown behavior to detect overstress or damage.
• Transistor Performance: Checking MOSFETs, BJTs, or IGBTs for proper switching behavior, threshold voltages, and gain to identify gate oxide damage, latch-up, or degradation.
• Detection of ESD/EOS Damage: Curve tracing often reveals the subtle shifts in I-V response caused by electrostatic discharge (ESD) or electrical overstress (EOS), even when there is no visible external damage.
• Comparative Analysis: Comparing failing devices against known-good units to highlight deviations in electrical behavior and isolate the failure mechanism.
• Non-Destructive Screening: Since curve tracing is non-invasive, it is often used as an early-stage diagnostic tool before proceeding to more destructive methods.

Curve tracing is often considered the “first line of electrical defense” in failure analysis, offering fast and reliable insight into device health, failure modes, and potential root causes.